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| VLMK33.. Vishay Semiconductors Power SMD LED in PLCC-2 Package FEATURES * Available in 8 mm tape * ESD-withstand voltage: up to 2 kV according to JESD22-A114-B e3 * Compatible with IR reflow, vapor phase and wave solder processes according to CECC 00802 and J-STD-020C * Preconditioning: acc. to JEDEC level 2a * Automotive qualified * Lead (Pb)-free device * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS * Interior and exterior lighting * Indicator and backlighting purposes for audio, video, LCDs, switches, symbols, illuminated advertising etc. * Illumination purpose, alternative to incandescent lamps * Automotive qualified * General use 19225 DESCRIPTION The VLMK33.. series is an advanced modification of the Vishay VLMK33.. series. It is designed to incorporate larger chips, therefore, capable of withstanding a 50 mA drive current. The package of the VLMK33.. is the PLCC-2 (equivalent to a size B tantalum capacitor). It consists of a lead frame which is embedded in a white thermoplast. The reflector inside this package is filled up with clear epoxy. PRODUCT GROUP AND PACKAGE DATA * Product group: LED * Package: SMD PLCC-2 * Product series: power * Angle of half intensity: 60 PARTS TABLE PART VLMK33Q2T1-GS08 VLMK33Q2T1-GS18 VLMK33R1S2-GS08 VLMK33R1S2-GS18 VLMK33S1T1-GS08 VLMK33S1T1-GS18 COLOR, LUMINOUS INTENSITY Red, IV > (90 to 355) mcd Red, IV > (90 to 355) mcd Red, IV = (112 to 280) mcd Red, IV = (112 to 280) mcd Red, IV = (180 to 355) mcd Red, IV = (180 to 355) mcd TECHNOLOGY AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs AlInGaP on GaAs Document Number 81350 Rev. 1.1, 13-Sep-07 www.vishay.com 1 VLMK33.. Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS1) VLMK33.. PARAMETER Reverse voltage2) DC Forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient t5s mounted on PC board (pad size > 16 mm2) TEST CONDITION SYMBOL VR IF PV Tj Tamb Tstg Tsd RthJA VALUE 5 50 130 125 - 40 to + 100 - 40 to + 100 260 400 UNIT V mA mW C C C C K/W Note: 1) Tamb = 25 C unless otherwise specified 2) Driving LED in reverse direction is suitable for a short term application OPTICAL AND ELECTRICAL CHARACTERISTICS1) VLMK33.., RED PARAMETER Luminous intensity Luminous flux/Luminous intensity Dominant wavelength Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse current Note: 1) Tamb = 25 C unless otherwise specified IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA IF = 20 mA VR = 5 V TEST CONDITION IF = 20 mA PART VLMK33Q2T1 VLMK33R1S2 VLMK33S1T1 SYMBOL IV IV IV V/IV d p VF VR 611 MIN 90 112 180 3.14 617 624 18 60 1.9 0.01 2.5 10 624 TYP. MAX 355 280 355 UNIT mcd mcd mcd mlm/mcd nm nm nm deg V A LUMINOUS INTENSITY CLASSIFICATION GROUP Q1 Q2 R1 R2 S1 S2 T1 T2 LUMINOUS INTENSITY (MCD) MIN 71 90 112 140 180 224 280 355 MAX 90 112 140 180 224 280 355 450 COLOR CLASSIFICATION DOMINANT WAVELENGTH (NM) GROUP MIN 1 2 3 4 5 6 Note: Wavelength are tested at a current pulse duration of 25 ms and an accuracy of 1 nm 611 614 RED MAX 618 622 Note: Luminous intensity is tested at a current pulse duration of 25 ms and an accuracy of 11 %. The above type Numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each reel (there will be no mixing of two groups on each reel). In order to ensure availability, single brightness groups will be not orderable. In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one reel. In order to ensure availability, single wavelength groups will be not orderable. CROSSING TABLE VISHAY VLMK33Q2T1 VLMK33R1S2 VLMK33S1T1 OSRAM LAT676-Q2T1 LAT676-R1S2 LAT676-S1T1 www.vishay.com 2 Document Number 81350 Rev. 1.1, 13-Sep-07 VLMK33.. Vishay Semiconductors TYPICAL CHARACTERISTICS Tamb = 25 C, unless otherwise specified 100 1.2 IV rel - Relative Luminous Intensity 90 red 1.0 0.8 0.6 0.4 0.2 0.0 IF - Forward Current (mA) 80 70 60 50 40 30 20 10 0 10 25 50 75 100 125 RthJA = 400 K/W 570 16007 590 610 630 650 670 16784 Tamb - Ambient Temperature (C) - Wavelength (nm) Figure 1. Forward Current vs. Ambient Temperature Figure 4. Rel. Luminous Intensity vs. Angular Displacement 0.12 100 90 I F - Forward Current (mA) 0.10 80 70 60 50 40 30 20 10 red IF - Forward Current (A) 0.08 0.06 0.04 0.02 0.00 10 -5 tP/T = 0.005 0.05 0.5 10 -4 10 -3 10 -2 10 -1 10 0 101 10 2 17047 17044 tP - Pulse Length (s) 0 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 VF - Forward Voltage (V) Figure 2. Forward Current vs. Pulse Length Figure 5. Forward Current vs. Forward Voltage 0 10 20 30 IV rel - Relative Luminous Intensity 10 IV rel - Relative Luminous Intensity red 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 1 0.1 0.01 1 17037 95 10319 10 IF - Forward Current (mA) 100 Figure 3. Rel. Luminous Intensity vs. Angular Displacement Figure 6. Change of Dominatn Wavelenght vs. Forward Current Document Number 81350 Rev. 1.1, 13-Sep-07 www.vishay.com 3 VLMK33.. Vishay Semiconductors VF - Change of Forward Voltage (mV) 2.5 IV rel - Relative Luminous Intensity red 2.0 1.5 1.0 0.5 0.0 - 50 17035 250 200 150 100 50 0 - 50 - 100 - 150 - 200 - 50 - 25 0 25 50 75 100 10 mA 30 mA 50 mA red - 25 0 25 50 75 100 Tamb - Ambient Temperature (C) 17034 Tamb - Ambient Temperature (C) Figure 7. Relative Luminous Intensity vs. Amb. Temperature Figure 9. Change of Forward Voltage vs. Ambient Temperature - Change of Dom. Wavelength (nm) 6 red 4 2 0 -2 -4 -6 - 50 d - 25 0 25 50 75 100 17036 Tamb - Ambient Temperature (C) Figure 8. Change of Dominant Wavelength vs. Ambient Temperature PACKAGE DIMENSIONS in millimeters 3.5 0.2 1.75 0.10 technical drawings according to DIN specifications 0.9 Mounting Pad Layout Pin identification 1.2 area covered with solder resist 2.6 (2.8) + 0.15 2.2 C A 2.8 4 1.6 (1.9) ? 2.4 3 + 0.15 Drawing-No.: 6.541-5025.01-4 Issue: 8; 22.11.05 95 11314-1 www.vishay.com 4 4 Document Number 81350 Rev. 1.1, 13-Sep-07 VLMK33.. Vishay Semiconductors METHOD OF TAPING/POLARITY AND TAPE AND REEL SMD LED (VLM3 - SERIES) Vishay's LEDs in SMD packages are available in an antistatic 8 mm blister tape (in accordance with DIN IEC 40 (CO) 564) for automatic component insertion. The blister tape is a plastic strip with impressed component cavities, covered by a top tape. REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS18 (= 8000 PCS.) PREFERRED 120 10.4 8.4 4.5 3.5 2.5 1.5 13.00 12.75 62.5 60.0 Identification Adhesive Tape Blister Tape Label: Vishay Type Group Tape Code Production Code Quantity 321 329 14.4 max. 18857 Figure 12.Reel dimensions - GS18 Component Cavity 94 8670 TAPING OF VLM.3.. 3.5 3.1 2.2 2.0 5.75 5.25 3.6 3.4 1.85 1.65 4.0 3.6 8.3 7.7 1.6 1.4 4.1 3.9 2.05 1.95 4.1 3.9 0.25 94 8668 Figure 10.Tape Dimensions in mm for PLCC-2 REEL PACKAGE DIMENSION IN MM FOR SMD LEDS, TAPE OPTION GS08 (= 1500 PCS.) 120 10.0 9.0 4.5 3.5 2.5 1.5 13.00 12.75 63.5 60.5 Identification Label: Vishay Type Group Tape Code Production Code Quantity 180 178 14.4 max. 94 8665 Figure 11.Reel Dimensions - GS08 Document Number 81350 Rev. 1.1, 13-Sep-07 www.vishay.com 5 VLMK33.. Vishay Semiconductors SOLDERING PROFILE IR Reflow Soldering Profile for lead (Pb)-free soldering Preconditioning acc. to JEDEC Level 2a BAR CODE PRODUCT LABEL EXAMPLE: 106 300 250 Temperature (C) 200 max. 30 s 150 max. 120 s 100 max. 100 s 255 C 240 C 217 C max. 260 C 245 C A H VISHAY 37 B 50 0 0 19885 C D E F G 19988 max. ramp up 3 C/s max. ramp down 6 C/s 50 100 150 Time (s) 200 250 300 max. 2 cycles allowed Figure 13.Vishay Lead (Pb)-free Reflow Soldering Profile (acc. to J-STD-020C) TTW Soldering 300 250 Temperature (C) 200 150 100 50 0 0 50 100 Time (s) 150 200 250 2 K/s forced cooling ca. 5 K/s 235 C...260 C first wave ca. 200 K/s 100 C...130 C second wave ca. 2 K/s full line: typical dotted line: process limits 5s (acc. to CECC00802) 948626-1 Lead Temperature A) Type of component B) Manufacturing plant C) SEL - selection code (bin): e.g.: Q2 = code for luminous intensity group D) Date code year/week E) Day code (e.g. 2: Tuesday) F) Batch no. G) Total quantity H) Company code Figure 14.Double Wave Soldering of Opto Devices (all Packages) www.vishay.com 6 Document Number 81350 Rev. 1.1, 13-Sep-07 VLMK33.. Vishay Semiconductors OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81350 Rev. 1.1, 13-Sep-07 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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